Electrical properties and thermal stability of Pd-doped copper nitride films
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, P. O. Box 603, Beijing 100190 (China)
Pd-doped copper nitride films with Pd concentrations up to 5.6 at. % were successfully synthesized by reactive magnetron sputtering of metal targets. Higher concentration of Pd (>5.6 at. %) would deteriorate the quality of the deposits. XPS and XRD data strongly suggest that Pd atoms occupy the centers of the Cu{sub 3}N unit cells rather than simply substituting for the Cu atoms. A reduction in the electrical resistivity by three orders of magnitude was observed when the Pd concentration increases from zero to 5.6 at. %. All the deposits with the Pd concentration up to 5.6 at. % exhibit n-typed conductivity behavior. The corresponding carrier concentrations increase by four orders of magnitude from 10{sup 17} to 10{sup 21} cm{sup -3}. Compared with the undoped copper nitride films, a weakly Pd-doped Cu{sub 3}N films possess fine thermal stability in vacuum. And the decomposition product after annealing at 450 Degree-Sign C exhibits a good metallic behavior, indicating that it qualifies the fabrication of conduct wires or metallic structures for the promising applications.
- OSTI ID:
- 22102240
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Influence of the chemical and electronic structure on the electrical behavior of zirconium oxynitride films
Understanding and control of bipolar self-doping in copper nitride