Modeling of inductively coupled plasma Ar/Cl{sub 2}/N{sub 2} plasma discharge: Effect of N{sub 2} on the plasma properties

Journal Article · Tue Jan 15 04:00:00 EST 2013 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4766681· OSTI ID:22099140

Chanson, Romain; Rhallabi, Ahmed; Fernandez, Marie Claude; Cardinaud, Christophe; Landesman, Jean Pierre ^[1]

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1. Institut des Materiaux Jean Rouxel, Universite de Nantes, 2 rue de la Houssiniere, 44322 Nantes (France)

A global kinetic model of Cl{sub 2}/Ar/N{sub 2} plasma discharge has been developed, which allows calculation of the densities and fluxes of all neutral and charged species considered in the reaction scheme, as well as the electron temperature, as a function of the operating conditions. In this work, the results from the global model are first compared to the calculations given by other models. Our simulation results are focused on the effect of nitrogen adding to the Cl{sub 2}/Ar plasma mixture, which impacts both neutral and charged species transport phenomena. The N{sub 2} percentage is varied to the detriment of Cl{sub 2} by keeping the total flow rates of Cl{sub 2} and N{sub 2} constant. In order to better understand the impact of N{sub 2} addition to the Cl{sub 2}/Ar gas mixture, the authors analyzed the output plasma parameters calculated from the model for different N{sub 2} flow rate percentages. Indeed, the simulation results show a decrease in electron density and an increase in electron temperature with increasing percentage of N{sub 2}. Particular attention is paid to the analysis of electronegativity, Cl{sub 2} and N{sub 2} dissociation, and positive ion to neutral flux ratio evolution by varying percentage of N{sub 2}. Such parameters have a direct effect on the etching anisotropy of the materials during the etching process.

• OSTI ID: 22099140
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 1 Vol. 31; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ANISOTROPY
ARGON
CHARGED-PARTICLE TRANSPORT
CHLORINE
DENSITY
DISSOCIATION
ELECTRIC DISCHARGES
ELECTRON DENSITY
ELECTRON TEMPERATURE
ELECTRONEGATIVITY
ETCHING
FLOW RATE
NEUTRAL-PARTICLE TRANSPORT
NITROGEN
PLASMA
PLASMA SIMULATION