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Title: Influence of copper to indium atomic ratio on the properties of Cu-In-Te based thin-film solar cells prepared by low-temperature co-evaporation

Journal Article · · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
DOI:https://doi.org/10.1116/1.4736948· OSTI ID:22098977
;  [1]
  1. Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa, 252-5258 (Japan)

The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu-In-Te based thin films and solar cells was investigated. The films (Cu/In = 0.38-1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 Degree-Sign C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe{sub 2} films were obtained at Cu/In ratios of 0.84-0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu{sub 2-x}Te phase, and significant evidence for the coexistence of the Cu{sub 2-x}Te phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu{sub 2-x}Te phase. The stoichiometric CuInTe{sub 2} thin films exhibited a high mobility above 50 cm{sup 2}/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-{mu}m-thick Cu-poor CuInTe{sub 2} thin film (Cu/In = 0.84, E{sub g} = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

OSTI ID:
22098977
Journal Information:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 30, Issue 5; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
Country of Publication:
United States
Language:
English