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Title: Single crystal of LiInSe{sub 2} semiconductor for neutron detector

Abstract

Single crystals of semiconductor-grade lithium indium selenide (LiInSe{sub 2}) were grown using the vertical Bridgman method. The orthorhombic structure of the materials was verified using powder x-ray diffraction. The room temperature band gap of the crystal was found to be 2.85 eV using optical absorption measurements. Resistivity of LiInSe{sub 2}, obtained using current-voltage measurements, has semiconducting nature (decreases with increasing temperature) and is in order of 10{sup 10}{Omega}{center_dot}cm. Photoconductivity measurement showed the photocurrent peak at 445 nm. Nuclear radiation devices were fabricated, and alpha particle detection was observed, suggesting that this material could be a candidate for neutron detection applications.

Authors:
; ; ; ; ;  [1];  [1];  [2];  [3]
  1. Fisk University, Department of Life and Physical Sciences Nashville, Tennessee 37208 (United States)
  2. (United States)
  3. Y-12 National Security Complex, Oak Ridge, Tennessee 37830 (United States)
Publication Date:
OSTI Identifier:
22089511
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 20; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALPHA DETECTION; BRIDGMAN METHOD; CRYSTAL GROWTH; INDIUM COMPOUNDS; LITHIUM COMPOUNDS; MONOCRYSTALS; NEUTRON DETECTORS; ORTHORHOMBIC LATTICES; PHOTOCONDUCTIVITY; POWDERS; SELENIUM COMPOUNDS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION

Citation Formats

Tupitsyn, E., Bhattacharya, P., Rowe, E., Matei, L., Groza, M., Wiggins, B., Burger, A., Vanderbilt University, Department of Physics and Astronomy, Nashville, Tennessee 37235, and Stowe, A. Single crystal of LiInSe{sub 2} semiconductor for neutron detector. United States: N. p., 2012. Web. doi:10.1063/1.4762002.
Tupitsyn, E., Bhattacharya, P., Rowe, E., Matei, L., Groza, M., Wiggins, B., Burger, A., Vanderbilt University, Department of Physics and Astronomy, Nashville, Tennessee 37235, & Stowe, A. Single crystal of LiInSe{sub 2} semiconductor for neutron detector. United States. doi:10.1063/1.4762002.
Tupitsyn, E., Bhattacharya, P., Rowe, E., Matei, L., Groza, M., Wiggins, B., Burger, A., Vanderbilt University, Department of Physics and Astronomy, Nashville, Tennessee 37235, and Stowe, A. Mon . "Single crystal of LiInSe{sub 2} semiconductor for neutron detector". United States. doi:10.1063/1.4762002.
@article{osti_22089511,
title = {Single crystal of LiInSe{sub 2} semiconductor for neutron detector},
author = {Tupitsyn, E. and Bhattacharya, P. and Rowe, E. and Matei, L. and Groza, M. and Wiggins, B. and Burger, A. and Vanderbilt University, Department of Physics and Astronomy, Nashville, Tennessee 37235 and Stowe, A.},
abstractNote = {Single crystals of semiconductor-grade lithium indium selenide (LiInSe{sub 2}) were grown using the vertical Bridgman method. The orthorhombic structure of the materials was verified using powder x-ray diffraction. The room temperature band gap of the crystal was found to be 2.85 eV using optical absorption measurements. Resistivity of LiInSe{sub 2}, obtained using current-voltage measurements, has semiconducting nature (decreases with increasing temperature) and is in order of 10{sup 10}{Omega}{center_dot}cm. Photoconductivity measurement showed the photocurrent peak at 445 nm. Nuclear radiation devices were fabricated, and alpha particle detection was observed, suggesting that this material could be a candidate for neutron detection applications.},
doi = {10.1063/1.4762002},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 101,
place = {United States},
year = {2012},
month = {11}
}