Single crystal of LiInSe{sub 2} semiconductor for neutron detector

Journal Article · Mon Nov 12 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4762002· OSTI ID:22089511

Tupitsyn, E.; Bhattacharya, P.; Rowe, E.; Matei, L.; Groza, M.; Wiggins, B. ^[1]; Burger, A. ^[1]; Stowe, A. ^[2]

---

1. Fisk University, Department of Life and Physical Sciences Nashville, Tennessee 37208 (United States)
2. Y-12 National Security Complex, Oak Ridge, Tennessee 37830 (United States)

Single crystals of semiconductor-grade lithium indium selenide (LiInSe{sub 2}) were grown using the vertical Bridgman method. The orthorhombic structure of the materials was verified using powder x-ray diffraction. The room temperature band gap of the crystal was found to be 2.85 eV using optical absorption measurements. Resistivity of LiInSe{sub 2}, obtained using current-voltage measurements, has semiconducting nature (decreases with increasing temperature) and is in order of 10{sup 10}{Omega}{center_dot}cm. Photoconductivity measurement showed the photocurrent peak at 445 nm. Nuclear radiation devices were fabricated, and alpha particle detection was observed, suggesting that this material could be a candidate for neutron detection applications.

• OSTI ID: 22089511
• Journal Information: Applied Physics Letters, Vol. 101, Issue 20; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALPHA DETECTION
BRIDGMAN METHOD
CRYSTAL GROWTH
INDIUM COMPOUNDS
LITHIUM COMPOUNDS
MONOCRYSTALS
NEUTRON DETECTORS
ORTHORHOMBIC LATTICES
PHOTOCONDUCTIVITY
POWDERS
SELENIUM COMPOUNDS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION