Electric field assisted sputtering of Fe{sub 3}O{sub 4} thin films and reduction in anti-phase boundaries
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Fe{sub 3}O{sub 4} thin films have been prepared by a new approach of in-situ electric field assisted sputtering. Raman shift, {rho}(T), and M(T) measurements reveal a reduction in anti-phase boundaries (APBs), which is explained by the electric field induced surface diffusion favouring [111] oriented growth with lesser defects. Early magnetization saturation (4 kOe) and its higher value (441 emu/cm{sup 3}), low electron phonon coupling constant (0.48), sharp Verwey transition {Delta}T{sub V} = 12 K, Arrhenius law of conduction via delocalized states above T{sub V} and lower value of localization radius (1.5 nm) below T{sub V} compared to that observed in un-assisted films confirmed that the electric field assisted grown films are nearly free from anti-phase boundaries.
- OSTI ID:
- 22089477
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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