Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth
- Center for the Innovation and Application of Science and Technology (CIACyT), Universidad Autonoma de San Luis Potosi, San Luis Potosi, S.L.P. 78210 (Mexico)
- Graduate School of Science and Engineering, Ehime University, Matsuyama, Ehime 790-8577 (Japan)
We report on the self-assembly of large-order-correlated nanoscale faceting on GaAs(631)A substrates grown by molecular beam epitaxy. The surface morphology of the grown samples as a function of the growth temperature and the As-beam equivalent pressure was studied using atomic force microscopy. A two-dimensional autocorrelation function analysis was performed in order to quantitatively determine the uniformity of the surface corrugation. By optimizing the growth conditions, correlated faceted areas as large as 1.7 Multiplication-Sign 1.7 {mu}m{sup 2} are obtained. The highly ordered surface corrugation discussed here provides useful insights to prepare highly ordered facet planes for the self organized growth of quantum wires.
- OSTI ID:
- 22089366
- Journal Information:
- Applied Physics Letters, Vol. 101, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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