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Laser irradiation-induced {alpha} to {delta} phase transformation in Bi{sub 2}O{sub 3} ceramics and nanowires

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4747198· OSTI ID:22089362
; ;  [1]
  1. Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
The {alpha}-Bi{sub 2}O{sub 3} to {delta}-Bi{sub 2}O{sub 3} phase transformation has been locally induced by laser irradiation in ceramic samples and single-crystal nanowires of this oxide. The threshold power densities necessary to induce this transformation, as well as the corresponding transformation kinetics and its temporal stability, have been investigated in both kinds of samples by micro-Raman spectroscopy. The appearance of the {delta} phase was also monitored by spatially resolved photoluminescence spectroscopy. An emission band peaked near 1.67 eV, not observed in {alpha}-Bi{sub 2}O{sub 3}, is tentatively attributed to {delta}-Bi{sub 2}O{sub 3} near band gap transitions.
OSTI ID:
22089362
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 101; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English