Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Journal Article · Mon Jul 23 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4737876· OSTI ID:22089319

Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu ^[1]

---

1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using capacitance-frequency-temperature (C-f-T) mapping. Applying sputtering-deposited AlN, we attained AlN/AlGaN/GaN MIS heterostructure field-effect transistors with much suppressed gate leakage currents, but exhibiting frequency dispersion in C-V characteristics owing to high-density AlN/AlGaN interface states. In order to investigate the interface states deteriorating the device performance, we measured temperature-dependent frequency dispersion in the C-V characteristics. As a result, we obtained C-f-T mapping, whose analysis gives the activation energies of electron trapping, namely the interface state energy levels, for a wide range of the gate biases. This analysis method is auxiliary to the conventional conductance method, serving as a valuable tool for characterization of wide-bandgap devices with deep interface states. From the analysis, we can directly evaluate the gate-control efficiency of the devices.

• OSTI ID: 22089319
• Journal Information: Applied Physics Letters, Vol. 101, Issue 4; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ALUMINIUM NITRIDES
CAPACITANCE
DENSITY
DEPOSITION
DISPERSIONS
EFFICIENCY
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
LEAKAGE CURRENT
PERFORMANCE
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE DEPENDENCE
TRAPPING
TRAPS