Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy

Roberts, Dennice M.; Kim, Hyunseok; McClure, Elisabeth L.; Lu, Kuangye; Mangum, John S.; Braun, Anna K.; Ptak, Aaron J.; Schulte, Kevin L.; Kim, Jeehwan; Simon, John

doi:10.1021/acsomega.3c07162

Title: Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy

Journal Article · Wed Nov 15 00:00:00 EST 2023 · ACS Omega

DOI:https://doi.org/10.1021/acsomega.3c07162· OSTI ID:2208860

^[1]; Kim, Hyunseok ^[2]; McClure, Elisabeth L. ^[1];

^[2];

^[1];

^[3]; Ptak, Aaron J. ^[1];

^[1];

^[2]; Simon, John ^[1]

National Renewable Energy Laboratory, Golden, Colorado 80401, United States
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
Colorado School of Mines, Golden, Colorado 80401, United States

We couple halide vapor phase epitaxy (HVPE) growth of III–V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III–V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by HVPE on a thin amorphous carbon layer that can be mechanically exfoliated, leaving the substrate available for reuse. We study nucleation as a function of carbon layer thickness and growth rate and find islandlike nucleation. We then study various GaAs growth conditions, including V/III ratio, growth temperature, and growth rate in an effort to minimize film roughness. High growth rates and thicker films lead to drastically smoother surfaces with reduced threading dislocation density. Finally, we grow an initial photovoltaic device on a carbon release layer that has an efficiency of 7.2%. The findings of this work show that HVPE growth is compatible with a carbon release layer and presents a path toward lowering the cost of photovoltaics with high throughput growth and substrate reuse.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: 35365; AC36-08GO28308

OSTI ID:: 2208860

Alternate ID(s):: OSTI ID: 2222413; OSTI ID: 2222655

Report Number(s):: NREL/JA-5K00-84015

Journal Information:: ACS Omega, Journal Name: ACS Omega Vol. 8 Journal Issue: 47; ISSN 2470-1343

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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