Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

Journal Article · Mon Oct 22 04:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4762834· OSTI ID:22080509

Nagata, T; Hayakawa, R; Chikyow, T ^[1]; Oh, S; Wakayama, Y ^[1]; Yamashita, Y ^[1]; Yoshikawa, H; Kobayashi, K ^[2]

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1. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
2. NIMS Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

We used hard x-ray photoelectron spectroscopy to investigate the interfacial electronic states of a poly(styrenesulfonate) doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) contact on a ZnO single crystal. An understanding of the interfacial band structure is useful for putting the organic contact to practical use. We observed upward band bending of the ZnO layer a few nanometers from the interface. The detected ZnO bulk region exhibited a flat band structure, meaning that the PEDOT:PSS does not greatly deplete the ZnO layer. The band bending caused the charge injection barrier formation with the result that the contact exhibited the Schottky property.

• OSTI ID: 22080509
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 101; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BENDING
DOPED MATERIALS
HARD X RADIATION
INJECTION
INTERFACES
LAYERS
MONOCRYSTALS
ORGANIC COMPOUNDS
SEMICONDUCTOR MATERIALS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES