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Title: Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

Abstract

The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

Authors:
; ;  [1]
  1. Institut fuer Halbleiter und Festkoerperphysik, Johannes Kepler Universitaet, A-4040 Linz (Austria)
Publication Date:
OSTI Identifier:
22080506
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; APPROXIMATIONS; ENERGY GAP; EUROPIUM COMPOUNDS; HETEROJUNCTIONS; LAYERS; LEAD SELENIDES; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TRANSMISSION

Citation Formats

Simma, M., Bauer, G., and Springholz, G. Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures. United States: N. p., 2012. Web. doi:10.1063/1.4759145.
Simma, M., Bauer, G., & Springholz, G. Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures. United States. doi:10.1063/1.4759145.
Simma, M., Bauer, G., and Springholz, G. Mon . "Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures". United States. doi:10.1063/1.4759145.
@article{osti_22080506,
title = {Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures},
author = {Simma, M. and Bauer, G. and Springholz, G.},
abstractNote = {The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.},
doi = {10.1063/1.4759145},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 101,
place = {United States},
year = {2012},
month = {10}
}