Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

Journal Article · Mon Oct 22 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4759145· OSTI ID:22080506

Simma, M; Bauer, G; Springholz, G ^[1]

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1. Institut fuer Halbleiter und Festkoerperphysik, Johannes Kepler Universitaet, A-4040 Linz (Austria)

The band offsets of PbSe/Pb{sub 1-x}Eu{sub x}Se multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k{center_dot}p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45{+-}0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

• OSTI ID: 22080506
• Journal Information: Applied Physics Letters, Vol. 101, Issue 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
APPROXIMATIONS
ENERGY GAP
EUROPIUM COMPOUNDS
HETEROJUNCTIONS
LAYERS
LEAD SELENIDES
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TRANSMISSION