Growth and characterization of LuAs films and nanostructures

Journal Article · Mon Oct 01 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4757605· OSTI ID:22080472

Krivoy, E M; Nair, H P; Crook, A M; Rahimi, S; Maddox, S J; Salas, R; Ferrer, D A; Dasika, V D; Akinwande, D; Bank, S R ^[1]

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1. Microelectronics Research Center, University of Texas at Austin, Texas 78712 (United States)

We report the growth and characterization of nearly lattice-matched LuAs/GaAs heterostructures. Electrical conductivity, optical transmission, and reflectivity measurements of epitaxial LuAs films indicate that LuAs is semimetallic, with a room-temperature resistivity of 90 {mu}{Omega} cm. Cross-sectional transmission electron microscopy confirms that LuAs nucleates as self-assembled nanoparticles, which can be overgrown with high-quality GaAs. The growth and material properties are very similar to those of the more established ErAs/GaAs system; however, we observe important differences in the magnitude and wavelength of the peak optical transparency, making LuAs superior for certain device applications, particularly for thick epitaxially embedded Ohmic contacts that are transparent in the near-IR telecommunications window around 1.3 {mu}m.

• OSTI ID: 22080472
• Journal Information: Applied Physics Letters, Vol. 101, Issue 14; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC COMPOUNDS
ELECTRIC CONDUCTIVITY
EPITAXY
GALLIUM ARSENIDES
HETEROJUNCTIONS
INFRARED SPECTRA
LAYERS
LIGHT TRANSMISSION
LUTETIUM COMPOUNDS
NANOSTRUCTURES
OPACITY
REFLECTIVITY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSMISSION
TRANSMISSION ELECTRON MICROSCOPY
WAVELENGTHS