Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Journal Article · Mon Sep 10 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4752115· OSTI ID:22080434

Zhu, Y; Jain, N; Hudait, M K ^[1]; Mohata, D K; Datta, S ^[2]; Lubyshev, D; Fastenau, J M; Liu, A K ^[3]

---

1. Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)
2. Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
3. IQE Inc., Bethlehem, Pennsylvania 18015 (United States)

The structural properties and band offset determination of p-channel staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to 'virtual substrate.' Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 {+-} 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.

• OSTI ID: 22080434
• Journal Information: Applied Physics Letters, Vol. 101, Issue 11; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
MASS SPECTRA
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
RESOLUTION
SEMICONDUCTOR MATERIALS
SUBSTRATES
TUNNEL EFFECT
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY