Si film separation obtained by high energy proton implantation
- CEA -LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)
High energy protons implantation in the 1-1.5 MeV range can be used to detach free-standing thin silicon films with thickness between 15 and 30 {mu}m. Recently, we showed that Si orientation has a strong effect on the layer separation threshold fluence and efficiency. While complete delamination of (111)Si films is achieved, (100)Si films separation is more challenging due to blistering phenomena or partial separation of the implanted layer. In this work, we study the fracture mechanism in (100) and (111)Si after high energy implantation in order to understand the origin of such a behavior. We notably point out that fracture precursor defects, i.e. the platelets, preferentially form on (111) planes, as a consequence of the low strain level in the damaged region in our implantation conditions. Fracture therefore propagates easily in (111)Si, while it requires higher fluence to overcome unfavorable precursors orientation and propagate in (100)Si.
- OSTI ID:
- 22075708
- Journal Information:
- AIP Conference Proceedings, Vol. 1496, Issue 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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