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Title: Si film separation obtained by high energy proton implantation

Abstract

High energy protons implantation in the 1-1.5 MeV range can be used to detach free-standing thin silicon films with thickness between 15 and 30 {mu}m. Recently, we showed that Si orientation has a strong effect on the layer separation threshold fluence and efficiency. While complete delamination of (111)Si films is achieved, (100)Si films separation is more challenging due to blistering phenomena or partial separation of the implanted layer. In this work, we study the fracture mechanism in (100) and (111)Si after high energy implantation in order to understand the origin of such a behavior. We notably point out that fracture precursor defects, i.e. the platelets, preferentially form on (111) planes, as a consequence of the low strain level in the damaged region in our implantation conditions. Fracture therefore propagates easily in (111)Si, while it requires higher fluence to overcome unfavorable precursors orientation and propagate in (100)Si.

Authors:
; ; ; ; ;  [1];  [2];  [2];  [2]
  1. CEA -LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)
  2. (France)
Publication Date:
OSTI Identifier:
22075708
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1496; Journal Issue: 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; FRACTURE MECHANICS; FRACTURES; HYDROGEN IONS; ION IMPLANTATION; LAYERS; MEV RANGE; ORIENTATION; PHYSICAL RADIATION EFFECTS; PRECURSOR; PROTONS; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; THIN FILMS

Citation Formats

Braley, C., Mazen, F., Papon, A.-M., Rieutord, F., Charvet, A.-M., Ntsoenzok, E., CEA -INAC, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, CEA -LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, and CNRS-CEMHTI, 3A rue de la Ferollerie, F-45071 Orleans. Si film separation obtained by high energy proton implantation. United States: N. p., 2012. Web. doi:10.1063/1.4766537.
Braley, C., Mazen, F., Papon, A.-M., Rieutord, F., Charvet, A.-M., Ntsoenzok, E., CEA -INAC, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, CEA -LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, & CNRS-CEMHTI, 3A rue de la Ferollerie, F-45071 Orleans. Si film separation obtained by high energy proton implantation. United States. doi:10.1063/1.4766537.
Braley, C., Mazen, F., Papon, A.-M., Rieutord, F., Charvet, A.-M., Ntsoenzok, E., CEA -INAC, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, CEA -LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, and CNRS-CEMHTI, 3A rue de la Ferollerie, F-45071 Orleans. Tue . "Si film separation obtained by high energy proton implantation". United States. doi:10.1063/1.4766537.
@article{osti_22075708,
title = {Si film separation obtained by high energy proton implantation},
author = {Braley, C. and Mazen, F. and Papon, A.-M. and Rieutord, F. and Charvet, A.-M. and Ntsoenzok, E. and CEA -INAC, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 and CEA -LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 and CNRS-CEMHTI, 3A rue de la Ferollerie, F-45071 Orleans},
abstractNote = {High energy protons implantation in the 1-1.5 MeV range can be used to detach free-standing thin silicon films with thickness between 15 and 30 {mu}m. Recently, we showed that Si orientation has a strong effect on the layer separation threshold fluence and efficiency. While complete delamination of (111)Si films is achieved, (100)Si films separation is more challenging due to blistering phenomena or partial separation of the implanted layer. In this work, we study the fracture mechanism in (100) and (111)Si after high energy implantation in order to understand the origin of such a behavior. We notably point out that fracture precursor defects, i.e. the platelets, preferentially form on (111) planes, as a consequence of the low strain level in the damaged region in our implantation conditions. Fracture therefore propagates easily in (111)Si, while it requires higher fluence to overcome unfavorable precursors orientation and propagate in (100)Si.},
doi = {10.1063/1.4766537},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1496,
place = {United States},
year = {2012},
month = {11}
}