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Title: Narrow-band N-resonance formed in thin rubidium atomic layers

Abstract

The narrow-band N-resonance formed in a {Lambda} system of D{sub 1}-line rubidium atoms is studied in the presence of a buffer gas (neon) and the radiations of two continuous narrow-band diode lasers. Special-purpose cells are used to investigate the dependence of the process on vapor column thickness L in millimeter, micrometer, and nanometer ranges. A comparison of the dependences of the N-resonance and the electromagnetically induced transparency (EIT) resonance on L demonstrates that the minimum (record) thickness at which the N-resonance can be detected is L = 50 {mu}m and that a high-contrast EIT resonance can easily be formed even at L Almost-Equal-To 800 nm. The N-resonance in a magnetic field for {sup 85}Rb atoms is shown to split into five or six components depending on the magnetic field and laser radiation directions. The results obtained indicate that levels F{sub g} = 2, 3 are initial and final in the N-resonance formation. The dependence of the N-resonance on the angle between the laser beams is analyzed, and practical applications are noted.

Authors:
; ;  [1]
  1. National Academy of Sciences of Armenia, Institute for Physical Research (Armenia)
Publication Date:
OSTI Identifier:
22069275
Resource Type:
Journal Article
Journal Name:
Journal of Experimental and Theoretical Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 5; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7761
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; ATOMS; COMPARATIVE EVALUATIONS; D STATES; LASER RADIATION; LAYERS; MAGNETIC FIELDS; NEON; OPACITY; RESONANCE; RUBIDIUM; RUBIDIUM 85; VAPORS

Citation Formats

Sargsyan, A., Mirzoyan, R., and Sarkisyan, D., E-mail: david@ipr.sci.am. Narrow-band N-resonance formed in thin rubidium atomic layers. United States: N. p., 2012. Web. doi:10.1134/S1063776112110088.
Sargsyan, A., Mirzoyan, R., & Sarkisyan, D., E-mail: david@ipr.sci.am. Narrow-band N-resonance formed in thin rubidium atomic layers. United States. doi:10.1134/S1063776112110088.
Sargsyan, A., Mirzoyan, R., and Sarkisyan, D., E-mail: david@ipr.sci.am. Thu . "Narrow-band N-resonance formed in thin rubidium atomic layers". United States. doi:10.1134/S1063776112110088.
@article{osti_22069275,
title = {Narrow-band N-resonance formed in thin rubidium atomic layers},
author = {Sargsyan, A. and Mirzoyan, R. and Sarkisyan, D., E-mail: david@ipr.sci.am},
abstractNote = {The narrow-band N-resonance formed in a {Lambda} system of D{sub 1}-line rubidium atoms is studied in the presence of a buffer gas (neon) and the radiations of two continuous narrow-band diode lasers. Special-purpose cells are used to investigate the dependence of the process on vapor column thickness L in millimeter, micrometer, and nanometer ranges. A comparison of the dependences of the N-resonance and the electromagnetically induced transparency (EIT) resonance on L demonstrates that the minimum (record) thickness at which the N-resonance can be detected is L = 50 {mu}m and that a high-contrast EIT resonance can easily be formed even at L Almost-Equal-To 800 nm. The N-resonance in a magnetic field for {sup 85}Rb atoms is shown to split into five or six components depending on the magnetic field and laser radiation directions. The results obtained indicate that levels F{sub g} = 2, 3 are initial and final in the N-resonance formation. The dependence of the N-resonance on the angle between the laser beams is analyzed, and practical applications are noted.},
doi = {10.1134/S1063776112110088},
journal = {Journal of Experimental and Theoretical Physics},
issn = {1063-7761},
number = 5,
volume = 115,
place = {United States},
year = {2012},
month = {11}
}