Synthesis, structural and electrochemical properties of electron beam evaporated V{sub 2}O{sub 5} thin films
- Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati-517 502 (India)
Vanadium pentoxide is one of the most promising cathode materials because it offers high energy density, low cost, low toxicity over the other cathode materials. Its layered and open structure makes this material in thin film form well suited for electro-chemical insertion reactions with the Li ions. In the present investigation, V{sub 2}O{sub 5} thin films have been prepared by electron beam evaporation technique on gold coated silicon substrates maintained at a substrate temperature of 250 Degree-Sign C in an oxygen partial pressure of 2 Multiplication-Sign 10{sup -4} mbar. The XRD patterns exhibited three predominant diffraction peaks corresponding to (200) (001) and (400) planes of orthorhombic phase of V{sub 2}O{sub 5} with P{sub mnm} space group. The electrochemical characteristics of V{sub 2}O{sub 5} thin films with thickness of 600 nm were examined in non-aqueous region. The film exhibited step wise discharge with two plateaus. The as-deposited film delivered a discharge capacity of 70 {mu}Ah/(cm{sup 2}-{mu}m) at a current density of 30 {mu}A/cm{sup 2}. Annealing of these films at 450 Degree-Sign C exhibited a better discharge capacity of 90 {mu}Ah/(cm{sup 2}-{mu}m).
- OSTI ID:
- 22068990
- Journal Information:
- AIP Conference Proceedings, Vol. 1451, Issue 1; Conference: Indian Vacuum Society symposium on thin films, Mumbai (India), 9-12 Nov 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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