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Title: N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

Abstract

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

Authors:
 [1]
  1. Centre for High-Technology Materials, University of New Mexico, Albuquerque (United States)
Publication Date:
OSTI Identifier:
22066614
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 42; Journal Issue: 12; Other Information: Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ENERGY-LEVEL TRANSITIONS; RELIABILITY; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS

Citation Formats

Eliseev, P G. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute. United States: N. p., 2012. Web. doi:10.1070/QE2012V042N12ABEH014983.
Eliseev, P G. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute. United States. doi:10.1070/QE2012V042N12ABEH014983.
Eliseev, P G. Mon . "N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute". United States. doi:10.1070/QE2012V042N12ABEH014983.
@article{osti_22066614,
title = {N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute},
author = {Eliseev, P G},
abstractNote = {A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)},
doi = {10.1070/QE2012V042N12ABEH014983},
journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 12,
volume = 42,
place = {United States},
year = {2012},
month = {12}
}