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Title: Aqueous-based route toward Fe:ZnSe semiconductor nanocrystals: Synthesis and characterization

Journal Article · · Materials Characterization

Nearly monodisperse and luminescent Fe-doped ZnSe semiconductor nanocrystals were synthesized by an aqueous-based route. The obtained nanocrystals were characterized by X-ray diffraction, transmission electron microscopy, Fourier transform infrared spectroscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, photoluminescence and ultraviolet-visible absorption spectroscopy. The resulting nanocrystals were well retained in the zinc blende structure, and the Fe dopants were doped into the ZnSe nanocrystals, as confirmed by X-ray photoelectron spectroscopy. From combination of transmission electron microscopy result and computing methods according to ultraviolet-visible absorption spectrum and X-ray diffraction pattern, particle size of the obtained nanocrystals was found to be about 5 nm. Thioglycolic acid as ligand was successfully capped on the surface of the resulting nanocrystals, confirmed by Fourier transform infrared and energy dispersive X-ray spectroscopy. The obtained nanocrystals exhibit an emission peak at 431 nm; and the photoluminescence band is relatively narrow and symmetric, which indicates that the nanocrystals are nearly monodisperse and homogeneous. Absorption shoulder of the resulting nanocrystals is blue-shifted compared with that of corresponding bulk ZnSe, indicating the quantum confinement effect. The possible reaction mechanism of formation of Fe-doped ZnSe nanocrystals in the aqueous solution was also discussed. Our results demonstrate that the aqueous-based route could be successfully adopted for producing high-quality doped semiconductor nanocrystals. - Research Highlights: {yields} An aqueous-based route is demonstrated for synthesizing Fe:ZnSe nanocrystals. {yields} Structure, composition and optical properties of the nanocrystals were investigated. {yields} The synthetic route could be adopted for producing high-quality doped nanocrystals.

OSTI ID:
22066369
Journal Information:
Materials Characterization, Vol. 62, Issue 6; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
Country of Publication:
United States
Language:
English