Dielectric properties of betaine phosphite and deuterated betaine phosphite films

Journal Article · Sat Jan 15 00:00:00 EST 2011 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774511010032· OSTI ID:22054350

Krichevtsov, B B; Zaitseva, N V ^[1]; Pankova, G A ^[2]; Frederiks, I D; Lemanov, V V ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Russian Academy of Sciences, Institute of Macromolecular Compounds (Russian Federation)

Polycrystalline films of betaine phosphite (BPI) and deuterated BPI have been grown by evaporation on LiNbO{sub 3}, {alpha}-SiO{sub 2}, {alpha}-Al{sub 2}O{sub 3}, and NdGaO{sub 3} substrates. These films consist of large single-crystal blocks in which the polar axis (b) lies in the substrate plane. The results of studying the dielectric properties of the films using interdigital electrodes, X-ray diffraction, and block images in a polarized-light microscope in reflection are reported. The film transition into the ferroelectric state at T = T{sub c} is accompanied by strong anomalies of the capacitance of the film/interdigital structure/substrate structure. The deuteration of BPI films leads to an increase in their temperature T{sub c}: from T{sub c} = 200 K for BPI-based structures to T{sub c} = 280 K for structures with a high degree of deuteration (d {approx} 90%).

• OSTI ID: 22054350
• Journal Information: Crystallography Reports, Vol. 56, Issue 1; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
BETAINE
DEUTERATION
DIELECTRIC PROPERTIES
EVAPORATION
FERROELECTRIC MATERIALS
FILMS
LITHIUM COMPOUNDS
MICROSCOPES
MONOCRYSTALS
NIOBATES
NIOBIUM OXIDES
PHOSPHORUS COMPOUNDS
POLYCRYSTALS
REFLECTION
SILICON OXIDES
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION