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Title: Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37-100%) grown on GaAs and InP substrates

Abstract

A complex study of the structural and electrical properties of nanoheterostructures containing a metamorphic barrier with a high InAs content (37-100%) in the active region have been performed by the Van der Pauw and X-ray diffraction methods. All peaks observed in the rocking curves for the samples studied (throughout the entire structure) have been revealed and identified. It is shown that, having properly chosen the design of the metamorphic buffer and the compositional gradient in it, one can obtain mobilities and concentrations of the 2D electron gas in the In{sub x}Ga{sub 1-x}As quantum well in the heterostructures formed on GaAs substrates that are comparable with the corresponding values for the nanoheterostructures grown on InP substrates. It is established that the mobility and concentration of 2D electron gas depend both on the metamorphic barrier design and on the structural quality of heterostructure as a whole.

Authors:
 [1];  [2];  [3]; ;  [1];  [3]
  1. Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)
  2. National Research Nuclear University, Moscow Engineering Physics Institute (Russian Federation)
  3. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
Publication Date:
OSTI Identifier:
22054257
Resource Type:
Journal Article
Journal Name:
Crystallography Reports
Additional Journal Information:
Journal Volume: 56; Journal Issue: 5; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7745
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRICAL PROPERTIES; ELECTRON GAS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; NEUTRON DIFFRACTION; QUANTUM WELLS; X-RAY DIFFRACTION

Citation Formats

Galiev, G. B., E-mail: galiev_galib@mail.ru, Vasil'evskii, I. S., E-mail: ivasilevskii@mail.ru, Imamov, R. M., Klimov, E. A., Pushkarev, S. S., and Subbotin, I. A. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37-100%) grown on GaAs and InP substrates. United States: N. p., 2011. Web. doi:10.1134/S1063774511050105.
Galiev, G. B., E-mail: galiev_galib@mail.ru, Vasil'evskii, I. S., E-mail: ivasilevskii@mail.ru, Imamov, R. M., Klimov, E. A., Pushkarev, S. S., & Subbotin, I. A. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37-100%) grown on GaAs and InP substrates. United States. doi:10.1134/S1063774511050105.
Galiev, G. B., E-mail: galiev_galib@mail.ru, Vasil'evskii, I. S., E-mail: ivasilevskii@mail.ru, Imamov, R. M., Klimov, E. A., Pushkarev, S. S., and Subbotin, I. A. Thu . "Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37-100%) grown on GaAs and InP substrates". United States. doi:10.1134/S1063774511050105.
@article{osti_22054257,
title = {Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37-100%) grown on GaAs and InP substrates},
author = {Galiev, G. B., E-mail: galiev_galib@mail.ru and Vasil'evskii, I. S., E-mail: ivasilevskii@mail.ru and Imamov, R. M. and Klimov, E. A. and Pushkarev, S. S. and Subbotin, I. A.},
abstractNote = {A complex study of the structural and electrical properties of nanoheterostructures containing a metamorphic barrier with a high InAs content (37-100%) in the active region have been performed by the Van der Pauw and X-ray diffraction methods. All peaks observed in the rocking curves for the samples studied (throughout the entire structure) have been revealed and identified. It is shown that, having properly chosen the design of the metamorphic buffer and the compositional gradient in it, one can obtain mobilities and concentrations of the 2D electron gas in the In{sub x}Ga{sub 1-x}As quantum well in the heterostructures formed on GaAs substrates that are comparable with the corresponding values for the nanoheterostructures grown on InP substrates. It is established that the mobility and concentration of 2D electron gas depend both on the metamorphic barrier design and on the structural quality of heterostructure as a whole.},
doi = {10.1134/S1063774511050105},
journal = {Crystallography Reports},
issn = {1063-7745},
number = 5,
volume = 56,
place = {United States},
year = {2011},
month = {9}
}