Plasma and vacuum ultraviolet induced charging of SiO{sub 2} and HfO{sub 2} patterned structures
- Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
The authors compare the effects of plasma charging and vacuum ultraviolet (VUV) irradiation on oxidized patterned Si structures with and without atomic-layer-deposited HfO{sub 2}. It was found that, unlike planar oxidized Si wafers, oxidized patterned Si wafers charge up significantly after exposure in an electron-cyclotron resonance plasma. The charging is dependent on the aspect ratio of the patterned structures. This is attributed to electron and/or ion shading during plasma exposure. The addition of a 10 nm thick HfO{sub 2} layer deposited on top of the oxidized silicon structures increases the photoemission yield during VUV irradiation, resulting in more trapped positive charge compared to patterns without the HfO{sub 2} dielectric.
- OSTI ID:
- 22054130
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 1 Vol. 30; ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASPECT RATIO
DEPOSITION
DIELECTRIC MATERIALS
ELECTRON CYCLOTRON-RESONANCE
FAR ULTRAVIOLET RADIATION
HAFNIUM OXIDES
PHOTOEMISSION
PLASMA
SILICON
SILICON OXIDES
TRAPS
VACUUM COATING