Development of a surface conductivity measurement system for ultrahigh vacuum transmission electron microscope

Journal Article · Sun Nov 15 00:00:00 EST 2009 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3251272· OSTI ID:22051086

Minoda, H ^[1]; Hatano, K; Yazawa, H ^[1]

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1. Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588 (Japan)

The surface conductivity measurement system using a micro-four-point probe (M4PP) had been developed for the ultrahigh vacuum transmission electron microscope (UHV-TEM). Since the current distribution in the sample crystals during the current voltage measurement by the M4PP is localized within the depth of several micrometers from the surface, the system is sensitive to the surface conductivity, which is related with the surface superstructure. It was installed in the main chamber of the TEM and the surface conductivity can be measured in situ. The surface structures were observed by reflection electron microscopy and diffraction (REM-RHEED). REM-RHEED enables us to observe the surface superstructures and their structure defects such as surface atomic steps and domain boundaries of the surface superstructure. Thus the effects of the defects on the surface conductivity can be investigated. In the present paper we present the surface conductivity measurement system and its application to the Si(111)-{radical}(3)x{radical}(3)-Ag surface prepared on the Si(111) vicinal surfaces. The result clearly showed that the surface conductivity was affected by step configuration.

• OSTI ID: 22051086
• Journal Information: Review of Scientific Instruments, Vol. 80, Issue 11; Other Information: (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTAL DEFECTS
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRON DIFFRACTION
ELECTRON MICROPROBE ANALYSIS
PRESSURE RANGE MICRO PA
PROBES
REFLECTION
SILICON
SURFACES
TRANSMISSION ELECTRON MICROSCOPY