Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption

Journal Article · Sun Jan 15 04:00:00 EST 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612010083· OSTI ID:22039056

Eremeev, S V ^[1]; Valisheva, N A; Tereshchenko, O E ^[2]

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1. Russian Academy of Sciences, Institute of Strength Physics and Materials Science, Siberian Branch (Russian Federation)
2. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

Based on ab initio calculations, the adsorption of oxygen and fluorine on reconstructed (2 Multiplication-Sign 2) and unreconstructed (1 Multiplication-Sign 1) InAs (111)A surfaces is studied. The most stable adsorption positions are determined. It is shown that adsorption of oxygen on both surfaces gives rise to electronic states in the band gap. The preferential positions for oxygen adsorption on an InAs (111)A (2 Multiplication-Sign 2) surface are those where oxygen is bonded both to indium atoms and to arsenic atoms in the surface layer and also the vacant site between three indium atoms (the 'In-hollow position). Adsorption of fluorine brings about a pushing of the surface states out of the band gap; the position above indium atoms (the 'In-top position) is preferential for adsorbed fluorine. Adsorption of fluorine on an InAs (111)A (1 Multiplication-Sign 1) surface leads to the elimination of the surface state formed by indium p orbitals and to an unpinning of the Fermi level.

• OSTI ID: 22039056
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
ARSENIC
FERMI LEVEL
FLUORINE
INDIUM
INDIUM ARSENIDES
LAYERS
OXYGEN
SURFACES