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Title: Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers

Journal Article · · Semiconductors
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  1. Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)

An analytical expression is derived for the linewidth enhancement factor of a quantum-dot laser, which makes it possible to describe its dependence on optical loss and photon density in an explicit form. The model accounts for refractive index variations at the ground-state optical transition due to gain/absorption variations upon the first excited-state transition in quantum dots. It is shown that a decrease in optical loss, an increase in saturated gain, and an increase in the energy separation between the excited-state and ground-state transitions results in a decrease in the {alpha} factor both at and above the lasing threshold.

OSTI ID:
22039034
Journal Information:
Semiconductors, Vol. 46, Issue 2; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English