Effect of erbium fluoride doping on the photoluminescence of SiO{sub x} films
- National Academy of Sciences, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
The photoluminescence of SiO{sub x} films deposited on c-Si wafers by the thermal evaporation of SiO in a vacuum and, for the first time, doped with ErF{sub 3} by coevaporation is studied. It is shown that, like undoped SiO{sub x} films, the unannealed SiO{sub x}:ErF{sub 3} films passivate the surface of the Si wafers and, thus, increase their edge photoluminescence intensity almost fivefold. A similar increase is observed after annealing of the doped films in air at 750 Degree-Sign C. Doping with ErF{sub 3} suppresses the photoluminescence of Si nanoclusters, if the films have been subjected to high-temperature annealing (at 750 Degree-Sign C). In this case, the PL intensity of the band with a peak at {approx}890 nm decreases as well. The {approx}890 nm band is observed for the first time and, due to its features, is attributed to transitions in SiO{sub x} matrix defects. The experimentally observed effect of ErF{sub 3} doping on SiO{sub x} film photoluminescence is interpreted. An intense photoluminescence signal from Er{sup 3+} ions in the nearinfrared spectral region (the {sup 4}I{sub 11/2} {yields} {sup 4}I{sub 15/2} and {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transitions) is observed in the SiO{sub x}:ErF{sub 3} films annealed in air at 750 Degree-Sign C. This finding shows that 1.54 {mu}m luminescent emitters, which are currently in popular demand, can be produced by a simple low-cost method.
- OSTI ID:
- 22039021
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 46; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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