Pulsed laser deposition of ITO thin films and their characteristics

Journal Article · Thu Mar 15 00:00:00 EDT 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612030256· OSTI ID:22039008

Lotin, A A; Novodvorsky, O A; Lebedev, F V; Khramova, O D ^[1]; Petuhov, I A; Shatohin, A N; Rumyanzeva, M N; Gaskov, A M ^[2]

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1. Russian Academy of Sciences, Institute on Laser and Information Technologies (Russian Federation)
2. Moscow State University, Faculty of Chemistry (Russian Federation)

The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 Multiplication-Sign 10{sup -4} {Omega} cm has been achieved in the ITO films with content of Sn 5 at %.

• OSTI ID: 22039008
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ENERGY BEAM DEPOSITION
GLASS
INDIUM
LASER RADIATION
OPTICAL PROPERTIES
SUBSTRATES
THIN FILMS
TIN OXIDES