Low-temperature (77-300 K) current-voltage characteristics of 4H-SiC p{sup +}-p-n{sup +} diodes: Effect of impurity breakdown in the p-type base
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
The effect of impurity breakdown on the low-temperature (77-300 K) current-voltage (I-V) characteristics of 4H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial p{sup +}-p-n{sup +} 4H-SiC structures. A high electric field in the p-type base was created by applying a forward bias to the diodes. It was found that, at temperatures of 136, 89, and 81 K, the commonly observed 'diode' portion of the I-V characteristics is followed by a portion in which the current grows more rapidly due to the impact ionization of frozen-out Al acceptor atoms in the ground (unexcited) state. At temperatures of 81 and 77 K, this portion is followed by one with a negative differential resistance due to the regenerative dynistor-like switching of the diode, caused by impact ionization of aluminum atoms in the excited state.
- OSTI ID:
- 22038993
- Journal Information:
- Semiconductors, Vol. 46, Issue 4; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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