Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Thermal expansion of CuIn{sub 5}S{sub 8} single crystals and the temperature dependence of their band gap

Journal Article · · Semiconductors
Single crystals of the CuIn{sub 5}S{sub 8} ternary compound are grown by planar crystallization of the melt (the vertical Bridgman method). The composition and structure of the crystals are established. The specific expansion is measured by the dilatometric technique, and the coefficients of thermal expansion are calculated. From the data, the Debye temperatures ({Theta}{sub D}) and the root-mean-square dynamic displacements of atoms ({radical}(u-bar{sup 2})) in the CuIn{sub 5}S{sub 8} compound are calculated. From the transmittance spectra recorded in the region of the fundamental absorption edge in the temperature range 20 to 300 K, the band gap is determined and its temperature dependence is constructed.
OSTI ID:
22038986
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 46; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English