Well-isolated L1{sub 0} FePt-SiN{sub x}-C nanocomposite films with large coercivity and small grain size
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117576 (Singapore)
- Seagate Technology, Fremont, California 94538 (United States)
FePt-SiN{sub x}-C films on TiN/CrRu/glass substrate with large coercivity, (001) texture, and small isolated grains were obtained by co-sputtering FePt, Si{sub 3}N{sub 4}, and C targets at 380 deg. C. It was found that when C was doped into the FePt-SiN{sub x} films, the out-of-plane coercivity increased while the small in-plane coercivity remained unchanged. Grain size decreased and grain size distribution became more uniform with increasing the C doping concentration. The x-ray photoelectron spectroscopy (XPS) depth profile showed a uniform depth distribution of Si in the FePt layer. The Si2p XPS spectrum implied the existence of Fe-Si bonds, indicating that SiN{sub x} was located at the FePt grain boundaries and was stable against diffusion to the surface, thus favoring grain isolation. Well-isolated FePt (001) granular films with coercivity higher than 21.5 kOe and an average grain size of 5.6 nm were obtained by doping 40 vol. % of SiN{sub x} and 20 vol. % of C.
- OSTI ID:
- 22038905
- Journal Information:
- Journal of Applied Physics, Vol. 111, Issue 7; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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