Radiation interaction with tilt grain boundaries in {beta}-SiC

Journal Article · Thu Mar 01 04:00:00 EST 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3693036· OSTI ID:22038880

Swaminathan, Narasimhan ^[1]; Wojdyr, Marcin ^[2]; Morgan, Dane D; Szlufarska, Izabela ^[1]

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1. Materials Science and Engineering Department, University of Wisconsin - Madison, Madison, Wisconsin 53706-1595 (United States)
2. Institute of High Pressure Physics UNIPRESS, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)

Interaction between grain boundaries and radiation is studied in 3C-SiC by conducting molecular dynamics cascade simulations on bicrystal samples with different misorientation angles. The damage in the in-grain regions was found to be unaffected by the grain boundary type and is comparable to damage in single crystal SiC. Radiation-induced chemical disorder in the grain boundary regions is quantified using the homonuclear to heteronuclear bond ratio ({chi}). We found that {chi} increases nearly monotonically with the misorientation angle, which behavior has been attributed to the decreasing distance between the grain boundary dislocation cores with an increasing misorientation angle. The change in the chemical disorder due to irradiation was found to be independent of the type of the grain boundary.

• OSTI ID: 22038880
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 111; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BICRYSTALS
COMPUTERIZED SIMULATION
DISLOCATIONS
GRAIN BOUNDARIES
IRRADIATION
MOLECULAR DYNAMICS METHOD
MONOCRYSTALS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES