Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)
- Center for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore)
- NUSNNI-NanoCore, National University of Singapore, Singapore 117576 (Singapore)
Graphene samples with 1, 2, and 4 layers and 1 + 1 folded bi-layers and graphite have been irradiated with 2 MeV protons at fluences ranging from 1 x 10{sup 15} to 6 x 10{sup 18} ions/cm{sup 2}. The samples were characterized using visible and UV Raman spectroscopy and Raman microscopy. The ion-induced defects were found to decrease with increasing number of layers. Graphene samples suspended over etched holes in SiO{sub 2} have been fabricated and used to investigate the influence of the substrate SiO{sub 2} for defect creation in graphene. While Raman vibrational modes at 1460 cm{sup -1} and 1555 cm{sup -1} have been observed in the visible Raman spectra of substantially damaged graphene samples, these modes were absent in the irradiated-suspended monolayer graphene.
- OSTI ID:
- 22038744
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 8; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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