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Title: Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films

Abstract

In this study, we implanted N{sup +} and N{sub 2}{sup +} ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible phase separation routes in boron carbon nitride (BCN) films. In addition, we investigated the effect of implanted C{sup +} ions in sputter deposited amorphous boron nitride (a-BN) films. Implanted ion energies for all ion species were set at 40 KeV. Implanted films were then analyzed using x-ray photoelectron spectroscopy (XPS). The changes in the chemical composition and bonding chemistry due to ion-implantation were examined at different depths of the films using sequential ion-beam etching and high resolution XPS analysis cycles. A comparative analysis has been made with the results from sputter deposited BCN films suggesting that implanted nitrogen and carbon atoms behaved very similar to nitrogen and carbon atoms in sputter deposited BCN films. We found that implanted nitrogen atoms would prefer bonding to carbon atoms in the films only if there is no boron atom in the vicinity or after all available boron atoms have been saturated with nitrogen. Implanted carbon atoms also preferred to either bond with available boron atomsmore » or, more likely bonded with other implanted carbon atoms. These results were also supported by ab-initio density functional theory calculations which indicated that carbon-carbon bonds were energetically preferable to carbon-boron and carbon-nitrogen bonds.« less

Authors:
; ; ;  [1]; ;  [2];  [3]
  1. Department of Chemistry, Bilkent University, Ankara, 06800 (Turkey)
  2. Department of Physics, Middle East Technical University, Ankara, 06531 (Turkey)
  3. Department of Physics, Bilkent University, Ankara, 06800 (Turkey)
Publication Date:
OSTI Identifier:
22038736
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 7; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON CARBIDES; BORON NITRIDES; CARBON IONS; CARBON NITRIDES; CHEMICAL BONDS; CHEMICAL COMPOSITION; DENSITY FUNCTIONAL METHOD; DEPOSITION; DIAMONDS; INDIUM IONS; ION BEAMS; ION IMPLANTATION; NITROGEN IONS; RESOLUTION; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Genisel, Mustafa Fatih, Uddin, Md. Nizam, Say, Zafer, Bengu, Erman, Kulakci, Mustafa, Turan, Rasit, and Gulseren, Oguz. Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films. United States: N. p., 2011. Web. doi:10.1063/1.3638129.
Genisel, Mustafa Fatih, Uddin, Md. Nizam, Say, Zafer, Bengu, Erman, Kulakci, Mustafa, Turan, Rasit, & Gulseren, Oguz. Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films. United States. doi:10.1063/1.3638129.
Genisel, Mustafa Fatih, Uddin, Md. Nizam, Say, Zafer, Bengu, Erman, Kulakci, Mustafa, Turan, Rasit, and Gulseren, Oguz. Sat . "Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films". United States. doi:10.1063/1.3638129.
@article{osti_22038736,
title = {Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films},
author = {Genisel, Mustafa Fatih and Uddin, Md. Nizam and Say, Zafer and Bengu, Erman and Kulakci, Mustafa and Turan, Rasit and Gulseren, Oguz},
abstractNote = {In this study, we implanted N{sup +} and N{sub 2}{sup +} ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible phase separation routes in boron carbon nitride (BCN) films. In addition, we investigated the effect of implanted C{sup +} ions in sputter deposited amorphous boron nitride (a-BN) films. Implanted ion energies for all ion species were set at 40 KeV. Implanted films were then analyzed using x-ray photoelectron spectroscopy (XPS). The changes in the chemical composition and bonding chemistry due to ion-implantation were examined at different depths of the films using sequential ion-beam etching and high resolution XPS analysis cycles. A comparative analysis has been made with the results from sputter deposited BCN films suggesting that implanted nitrogen and carbon atoms behaved very similar to nitrogen and carbon atoms in sputter deposited BCN films. We found that implanted nitrogen atoms would prefer bonding to carbon atoms in the films only if there is no boron atom in the vicinity or after all available boron atoms have been saturated with nitrogen. Implanted carbon atoms also preferred to either bond with available boron atoms or, more likely bonded with other implanted carbon atoms. These results were also supported by ab-initio density functional theory calculations which indicated that carbon-carbon bonds were energetically preferable to carbon-boron and carbon-nitrogen bonds.},
doi = {10.1063/1.3638129},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 110,
place = {United States},
year = {2011},
month = {10}
}