The electronic structure of co-sputtered zinc indium tin oxide thin films
- Departament de Fisica Aplicada i Optica, Universitat de Barcelona, 08028 Barcelona (Spain)
- Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States)
- Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)
Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.
- OSTI ID:
- 22038731
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 7; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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