High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions
- Department of Energy Conversion and Storage, Technical University of Denmark, Frederiksborgvej 399, Roskilde 4000 (Denmark)
- Infineon Technologies Austria AG, Siemensstrasse 2, Villach 9500 (Austria)
A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF{sub 6} gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F{sup -}. The magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF{sub 6}/O{sub 2} mixtures was almost similar with that by positive ions reaching 700 nm/min.
- OSTI ID:
- 22036864
- Journal Information:
- Journal of Applied Physics, Vol. 111, Issue 8; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ELECTRON CYCLOTRON-RESONANCE
ELECTRON TEMPERATURE
ELECTRONEGATIVITY
ELECTRONS
ELECTROSTATIC PROBES
EV RANGE
FLUORINE IONS
MAGNETIC FIELDS
MAGNETIC FILTERS
MASS SPECTROSCOPY
PLASMA
PLASMA DENSITY
PLASMA DIAGNOSTICS
PLASMA INSTABILITY
PLASMA POTENTIAL
SEMICONDUCTOR MATERIALS
SILICON
SULFUR FLUORIDES