Utility of reactively sputtered CuN{sub x} films in spintronics devices
- Physics Department, Goeteborg University, 412 96 Goeteborg (Sweden)
- Materials Physics Department, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden)
- Department of Physics, Center for Integrated Functional Materials, University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620 (United States)
We have studied nitrified copper (CuN{sub x}) thin films grown by reactive sputtering in the context of spintronic devices. The Ar-to-N{sub 2} flow ratio enables tunability of the electrical resistivity and surface roughness of the CuN{sub x} films, with the former increasing to nearly 20 times that of Cu, and the latter reduced to the atomic scale. Incorporating this into a Ta/CuN{sub x}/Ta seed stack for spin valves improves the current-in-plane (CIP) magnetoresistance; maximum magnetoresistance results with CuN{sub x} seed layer and Cu interlayer. Finally, finite element modeling results are presented that suggest the use of CuN{sub x} in nanocontact spin torque oscillators can enhance current densities by limiting the current spread through the device. This may positively impact threshold currents, power requirements, and device reliability.
- OSTI ID:
- 22036845
- Journal Information:
- Journal of Applied Physics, Vol. 111, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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