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Title: Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3681812· OSTI ID:22036807
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  1. Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States)
  2. Department of Chemistry, City College of CUNY, New York, New York 10031 (United States)
  3. College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States)
  4. Department of Physics, Queens College of CUNY, Flushing, New York 11367 (United States)

We report the structural properties and spatial ordering of multilayer ZnMgTe quantum dots (QDs) embedded in ZnSe, where sub-monolayer quantities of Mg were introduced periodically during growth in order to reduce the valence band offset of ZnTe QDs. The periodicity, period dispersion, individual layer thickness, and the composition of the multilayer structures were determined by comparing the experimental high resolution x-ray diffraction (HRXRD) spectra to simulated ones for the allowed (004) and quasi-forbidden (002) reflections in combination with transmission electron microscopy (TEM) results. Secondary ion mass spectroscopy (SIMS) profiles confirmed the incorporation of Mg inside the QD layers, and the HRXRD analysis revealed that there is approximately 32% Mg in the ZnMgTe QDs. The presence of Mg contributes to higher scattering intensity of the HRXRD, leading to the observation of higher order superlattice peaks in both the (004) and (002) reflections. The distribution of scattered intensity in the reciprocal space map (RSM) shows that the diffuse scattered intensity is elongated along the q{sub x} axis, indicating a vertical correlation of the dots, which is found to be less defined for the sample with larger periodicity. The diffuse scattered intensity is also found to be weakly correlated along the q{sub z} direction indicating a weak lateral correlation of the dots.

OSTI ID:
22036807
Journal Information:
Journal of Applied Physics, Vol. 111, Issue 3; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English