Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

Journal Article · Wed Nov 30 23:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3665639· OSTI ID:22036786

Kumar, Mahesh; Roul, Basanta ^[1]; Rajpalke, Mohana K; Bhat, Thirumaleshwara N; Krupanidhi, S B ^[1]; Kalghatgi, A T ^[2]

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1. Materials Research Centre, Indian Institute of Science, Bangalore-560012 (India)
2. Central Research Laboratory, Bharat Electronics, Bangalore-560013 (India)

InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

• OSTI ID: 22036786
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 110; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
APPROXIMATIONS
CRYSTAL MODELS
EFFECTIVE MASS
ELECTRIC CONDUCTIVITY
ENERGY GAP
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PLASMA
QUANTUM DOTS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SQUARE-WELL POTENTIAL
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT
X-RAY DIFFRACTION