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Effect of K doping on CuPc: C{sub 60} heterojunctions

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3665711· OSTI ID:22036785
;  [1]; ;  [2]
  1. Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan (China)
  2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
Here, the electronic properties of K-doped copper phthalocyanine (CuPc): C{sub 60} heterojunctions are studied via synchrotron-radiation photoemission. The K-doped heterointerfaces were obtained by means of C{sub 60} on K{sub 1.5}CuPc and CuPc on K{sub 3}C{sub 60}. The photoelectron spectra show that the potassium prefers to combine with C{sub 60}. At the C{sub 60}/K{sub 1.5}CuPc interface, the K diffuses and transfers negative charge into the C{sub 60} overlayer, while no strong chemical reaction could be found at the CuPc/K{sub 3}C{sub 60} interface. A significant shift of the vacuum level was observed in both cases, which was caused by the charge transfer for the C{sub 60}/K{sub 1.5}CuPc and by the induced density of interface states (IDIS) dipole for the CuPc/K{sub 3}C{sub 60}. The energy level diagrams show that using C{sub 60} adsorption on a K-doped CuPc film is good for the improvement of photovoltaic devices. However, the inverse process, that of CuPc on a K-doped C{sub 60}, is unfavorable for the photovoltaic effect.
OSTI ID:
22036785
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 110; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English