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In situ imaging of orthoclase-aqueous solution interfaces with x-ray reflection interface microscopy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3661978· OSTI ID:22036768
;  [1];  [2];  [3]
  1. Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)
  2. Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)
  3. Department of Earth and Environmental Sciences, University of Illinois at Chicago, 845 West Taylor Street, Chicago, Illinois 60607 (United States)

The use of x-ray reflection interface microscopy (XRIM) to image molecular-scale topography at the aqueous-solid interface, in situ, is described. Specifically, we image interfacial topography of the orthoclase-(001)-aqueous solution interface at room temperature and describe the challenges associated with in situ XRIM imaging. The measurements show that the reflectivity signal for in situ XRIM measurements is substantially smaller than that for ex situ measurements, because of both intrinsic and extrinsic factors. There is also a systematic temporal reduction in the image intensity with increasing x-ray dose, revealing that interaction of the focused x-ray beam with the orthoclase interfaces leads to interfacial perturbations, presumably in the form of surface roughening. This image fading is localized to the x-ray beam footprint, suggesting that the primary damage mechanism is initiated by photoelectrons produced by x-ray beam absorption near the substrate-electrolyte interface. Finally, the role of aqueous solution composition in controlling the sensitivity of the orthoclase surface to x-ray beam-induced effects is explored. A substantial increase in the orthoclase (001) surface stability was observed in solutions having elevated ionic strength, apparently as a result of the reduced lifetime of radiation chemistry products at these conditions.

OSTI ID:
22036768
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 110; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English