Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures

Journal Article · Tue Nov 01 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3657778· OSTI ID:22036760

Liu, Z Q; Chim, W K ^[1]; Chiam, S Y; Pan, J S ^[2]; Ng, C M ^[3]

---

1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
2. Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
3. GLOBALFOUNDRIES Singapore Pte. Ltd, 60 Woodlands Street 2, Singapore 738406 (Singapore)

In this work, photoelectron spectroscopy is used to characterize the band alignment of lanthanum aluminate heterostructures which possess a wide range of potential applications. It is found that our experimental slope parameter agrees with theory using the metal-induced gap states model while the interface induced gap states (IFIGS) model yields unsatisfactory results. We show that this discrepancy can be attributed to the correlation between the dielectric work function and the electronegativity in the IFIGS model. It is found that the original trend, as established largely by metals, may not be accurate for larger band gap materials. By using a new correlation, our experimental data shows good agreement of the slope parameter using the IFIGS model. This correlation, therefore, plays a crucial role in heterostructures involving wider bandgap materials for accurate band alignment prediction using the IFIGS model.

• OSTI ID: 22036760
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 9; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINATES
CORRELATIONS
DIELECTRIC MATERIALS
ELECTRONEGATIVITY
ENERGY GAP
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
LANTHANUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SILICON
WORK FUNCTIONS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC COMPOUNDS