Electron-hole asymmetry in the phase diagram of carrier-tuned CsV3Sb5

Capa Salinas, Andrea N.; Ortiz, Brenden R.; Bales, Calvin; Frassineti, Jonathan; Mitrović, Vesna F.; Wilson, Stephen D.

doi:10.3389/femat.2023.1257490

Electron-hole asymmetry in the phase diagram of carrier-tuned CsV3Sb5

Journal Article · Tue Oct 24 00:00:00 EDT 2023 · Frontiers in Electronic Materials

DOI:https://doi.org/10.3389/femat.2023.1257490· OSTI ID:2203491

Capa Salinas, Andrea N.; Ortiz, Brenden R.; Bales, Calvin; Frassineti, Jonathan; Mitrović, Vesna F.; Wilson, Stephen D.

In this work, we study the effect of electron doping on the kagome superconductor CsV ₃ Sb ₅ . Single crystals and powders of CsV ₃ Sb _{5− x} Te _x are synthesized and characterized via magnetic susceptibility, nuclear quadrupole resonance, and x-ray diffraction measurements, where we observe a slight suppression of the charge density wave transition temperature and superconducting temperature with the introduction of electron dopants. In contrast to hole doping, both transitions survive relatively unperturbed up to the solubility limit of Te within the lattice. A comparison is presented between the electronic phase diagrams of electron- and hole-tuned CsV ₃ Sb ₅ .

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2203491

Alternate ID(s):: OSTI ID: 2217696

Journal Information:: Frontiers in Electronic Materials, Journal Name: Frontiers in Electronic Materials Vol. 3; ISSN 2673-9895

Publisher:: Frontiers Media SACopyright Statement

Country of Publication:: Sweden

Language:: English

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