Dielectric relaxation in complex perovskite oxide In(Ni{sub 1/2}Zr{sub 1/2})O{sub 3}
- University Department of Physics, T. M. Bhagalpur University, Bhagalpur 812007 (India)
- Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road, Kolkata 700009 (India)
The dielectric study of indium nickel zirconate, In(Ni{sub 1/2}Zr{sub 1/2})O{sub 3} (INZ) synthesized by solid state reaction technique is performed in a frequency range from 500 Hz to 1 MHz and in a temperature range from 303 to 493 K. The X-ray diffraction analysis shows that the compound is monoclinic. A relaxation is observed in the entire temperature range as a gradual decrease in {epsilon}'({omega}) and as a broad peak in {epsilon}''({omega}) in the frequency dependent real and imaginary parts of dielectric constant, respectively. The frequency dependent electrical data are analyzed in the framework of conductivity and electric modulus formalisms. The frequencies corresponding to the maxima of the imaginary electric modulus at various temperatures are found to obey an Arrhenius law with activation energy of 0.66 eV. The Cole-Cole model is used to study the dielectric relaxation of INZ. The scaling behaviour of imaginary part of electric modulus suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependent conductivity spectra follow the universal power law.
- OSTI ID:
- 22029849
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 9 Vol. 44; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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