Direct diffusion bonding of Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2}
- School of Materials Science and Engineering, Anhui University of Technology, Ma'anshan 243002, Anhui Province (China)
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72, Wenhua Road, Shenyang 110016, Liaoning Province (China)
Two typical layered ternary compounds, Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2}, were joined directly by solid-state diffusion bonding method. By various bonding tests at 1100-1300 deg. C for 30-120 min under 10-30 MPa, and characterizing the microstructure and diffusion reactive phases of the joints by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), transmission electron microscopy (TEM) and X-ray diffraction (XRD), the optimal condition for direct joining of Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2} was obtained. Strong joints of Ti{sub 3}SiC{sub 2}/Ti{sub 3}AlC{sub 2} can be achieved via diffusion bonding, which is attributed to remarkable interdiffusion of Si and Al at the joint interface. The shear strength of the Ti{sub 3}SiC{sub 2}/Ti{sub 3}AlC{sub 2} joints was determined.
- OSTI ID:
- 22029789
- Journal Information:
- Materials Research Bulletin, Vol. 44, Issue 6; Other Information: Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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