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Title: Direct diffusion bonding of Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2}

Journal Article · · Materials Research Bulletin
 [1]; ; ;  [2]
  1. School of Materials Science and Engineering, Anhui University of Technology, Ma'anshan 243002, Anhui Province (China)
  2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72, Wenhua Road, Shenyang 110016, Liaoning Province (China)

Two typical layered ternary compounds, Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2}, were joined directly by solid-state diffusion bonding method. By various bonding tests at 1100-1300 deg. C for 30-120 min under 10-30 MPa, and characterizing the microstructure and diffusion reactive phases of the joints by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), transmission electron microscopy (TEM) and X-ray diffraction (XRD), the optimal condition for direct joining of Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2} was obtained. Strong joints of Ti{sub 3}SiC{sub 2}/Ti{sub 3}AlC{sub 2} can be achieved via diffusion bonding, which is attributed to remarkable interdiffusion of Si and Al at the joint interface. The shear strength of the Ti{sub 3}SiC{sub 2}/Ti{sub 3}AlC{sub 2} joints was determined.

OSTI ID:
22029789
Journal Information:
Materials Research Bulletin, Vol. 44, Issue 6; Other Information: Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English