Magnetic-field-induced nonparabolicity of exciton dispersion in semiconductors with a nondegenerate valence band

Journal Article · Thu Sep 15 00:00:00 EDT 2011 · Journal of Experimental and Theoretical Physics

DOI:https://doi.org/10.1134/S1063776111070065· OSTI ID:22028016

Chegodaev, A D ^[1]

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1. St. Petersburg State University (Russian Federation)

The nonparabolicity of exciton dispersion due to the mixing of the ground and excited states of an exciton in an external magnetic field perpendicular to the direction of its motion is considered. A model describing this effect is proposed and the nonparabolicity for an exciton in a CdTe crystal is calculated. The magnetic-field induced exciton nonparabolicity is compared with the effect caused by the nonparabolicity of the electron energy dispersion in the conduction band.

• OSTI ID: 22028016
• Journal Information: Journal of Experimental and Theoretical Physics, Vol. 113, Issue 3; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM TELLURIDES
CRYSTALS
ELECTRONIC STRUCTURE
ELECTRONS
EXCITED STATES
EXCITONS
GROUND STATES
MAGNETIC FIELDS
SEMICONDUCTOR MATERIALS
VALENCE