Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor

Journal Article · Mon Oct 24 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3657511· OSTI ID:22027788

Hyung Kim, Do ^[1]; Youn Yoo, Dong ^[2]; Kwang Jung, Hyun; Hwan Kim, Dae ^[3]; Yeol Lee, Sang ^[1]

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1. Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk 360-764 (Korea, Republic of)
2. Future Convergence Research Division, Korea Institute of Science and Technology, Seoul 130-012 (Korea, Republic of)
3. School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

The origin of instability under positive bias stress (PBS) in amorphous Si-In-Zn-O (SIZO) thin film transistor (TFT) with different Si concentration has been investigated by x-ray photoelectron spectroscopy (XPS) and density of states (DOSs) analysis. It is found that stability of SIZO-TFT with 3 wt. % Si under PBS became more deteriorated than that of 1 wt. % Si incorporated SIZO-TFT due to the increased oxygen related trap distributed in energy range from conduction band to {approx}0.3 eV below the conduction band. The origin of instability under PBS was discussed in terms of oxygen related trap derived from DOSs and XPS analysis.

• OSTI ID: 22027788
• Journal Information: Applied Physics Letters, Vol. 99, Issue 17; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ENERGY-LEVEL DENSITY
EV RANGE
INDIUM COMPOUNDS
INSTABILITY
OXYGEN
PHASE STABILITY
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
STRESSES
THIN FILMS
TRANSISTORS
TRAPS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES