Molecular orbital ordering in titania and the associated semiconducting behavior
- Department of Materials Science and Engineering, Dankook University, Mt. 29, Anseo-Dong, Cheonan 330-714 (Korea, Republic of)
- Samsung Electronics, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-711 (Korea, Republic of)
- Department of Physics, Dankook University, Mt. 29, Anseo-Dong, Cheonan 330-714 (Korea, Republic of)
RF-sputtered TiO{sub x} layers were thermally treated and the associated thin-film transistor properties were studied. X-ray diffraction and x-ray absorption spectroscopy analyses indicate that as-grown amorphous TiO{sub x} films crystallize to anatase at temperatures above 450 deg. C in air. Thin-film transistors incorporating anatase active layers exhibit n-type behavior, with field effect mobility values near 0.11 cm{sup 2}/Vs when annealed at 550 deg. C. Such a phenomenon is suggested to originate from the ordering of Ti 3d orbitals upon crystallization, and the mobility enhancement at higher annealing temperatures may be attributed to the reduced grain boundary scattering of carriers by virtue of enlarged average grain size.
- OSTI ID:
- 22027769
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 14; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ANNEALING
CARRIER MOBILITY
CRYSTAL GROWTH
CRYSTALLIZATION
GRAIN BOUNDARIES
GRAIN SIZE
LAYERS
MOLECULAR ORBITAL METHOD
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
TITANIUM OXIDES
TRANSISTORS
X-RAY DIFFRACTION
X-RAY SPECTRA
X-RAY SPECTROSCOPY