Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga{sup +} irradiation
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)
Hexagonally ordered nanohole patterns were produced on Ge(100) surfaces by focused Ga{sup +} ion beam and broad Ga{sup +} ion beam irradiations with 5 keV energy under normal incidence. Identical patterns were obtained by irradiations with a scanning focused ion beam under different irradiation conditions and with a broad Ga{sup +} beam without scanning and five orders of magnitude smaller ion flux. Thus, we could demonstrate that nanohole pattern formation is independent of ion flux over several orders of magnitude and scanning of a focused ion beam under appropriate conditions is identical to broad ion beam irradiation.
- OSTI ID:
- 22025574
- Journal Information:
- Applied Physics Letters, Vol. 100, Issue 22; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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