Partially filled intermediate band of Cr-doped GaN films

Journal Article · Mon May 14 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4717716· OSTI ID:22025555

Sonoda, S ^[1]

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1. Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

• OSTI ID: 22025555
• Journal Information: Applied Physics Letters, Vol. 100, Issue 20; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ABSORPTION
CHARGE CARRIERS
CHARGE TRANSPORT
CHROMIUM COMPOUNDS
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM NITRIDES
INTERFACES
PHOTOELECTRON SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SPUTTERING
THIN FILMS