Electrolytic Etching of Germanium Substrates with Hydrogen Peroxide
Anodic electrolytic etching of germanium has been performed in hydrogen peroxide etchants with controlled external conditions. In-situ current and ex-situ etch-depths were measured and tracked with respect to etchant composition and stir rates. Gas bubbles formed during the etching process were found to cause non-uniformity in etch-current and surface quality. The effects were minimized in specific composition spaces. Quantitative analysis revealed a linear correlation of the number of electrons transferred during germanium oxidation with the number of surface atoms removed. Experimental results of 2.77 electrons/atom deviate significantly from 4 electrons/atom previously reported for silicon. The conclusion is that etching mechanisms for germanium are sufficiently different from those for silicon which invalidates the direct transfer of processing techniques between the two materials.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- AC52-07NA27344
- OSTI ID:
- 2202309
- Alternate ID(s):
- OSTI ID: 2007677; OSTI ID: 2309842
- Report Number(s):
- LLNL-JRNL-860590
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Vol. 170 Journal Issue: 10; ISSN 0013-4651
- Publisher:
- The Electrochemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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