Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Optical spectroscopy of free excitons in a CuInS{sub 2} chalcopyrite semiconductor compound

Journal Article · · Semiconductors
 [1]; ;  [2];  [3]
  1. National Academy of Sciences of Belarus, Joint Institute of Solid State Physics and Semiconductors (Belarus)
  2. Strathclyde University (United Kingdom)
  3. Balga University (Jordan)
The spectra of reflectance and luminescence of high-quality CuInS{sub 2} single crystals grown by oriented crystallization are studied at the temperature 4.2 K. In the region of the fundamental absorption edge, the two excitonic resonance reflectance peaks, nondegenerate peak A at the energy {approx}1.5356 eV and doubly degenerate peak BC at the energy {approx}1.5567 eV, and the luminescence signal produced by free and bound excitons are observed. The luminescence lines, A{sub UPB} at {approx}1.5361 eV and A{sub LPB} at {approx}1.5347 eV, with a half-width {approx}1 meV, are attributed to exciton-polariton recombination. From the experimentally observed energy position of the exciton ground state and excited states, the binding energy of free excitons is determined to be {approx}18.5 meV. In studying the photoluminescence in magnetic fields up to 10 T, a diamagnetic shift of the ground state of free excitons A is observed.
OSTI ID:
22004946
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 42; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English